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| FDD3860 N-Channel PowerTrench(R) MOSFET October 2008 FDD3860 N-Channel PowerTrench(R) MOSFET 100V, 29A, 36m Features Max rDS(on) = 36m at VGS = 10V, ID = 5.9A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant tm General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor`s advanced Power Trench(R) process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier D D G S G D -PA52 TO -2 K (TO -252) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TA = 25C (Note 1a) Ratings 100 20 29 6.2 60 121 69 3.1 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.8 40 C/W Package Marking and Ordering Information Device Marking FDD3860 Device FDD3860 Package D-PAK (TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 1 www.fairchildsemi.com FDD3860 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V 100 98 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 5.9A VGS = 10V, ID = 5.9A, TJ = 125C VDS = 10V, ID = 5.9A 2.5 3.8 -11.4 29 51 20 36 64 4.5 V mV/C m S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50V, VGS = 0V, f = 1MHz f = 1MHz 1310 100 45 1.6 1740 130 70 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Charge Gate to Drain "Miller" Charge VDD = 50V, ID = 5.9A VDD = 50V, ID = 5.9A, VGS = 10V, RGEN = 6 16 10 24 7 22 7.1 6.3 29 21 39 15 31 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.0A VGS = 0V, IS = 5.9A (Note 2) (Note 2) 0.7 0.8 34 40 1.2 1.3 55 64 V ns nC IF = 5.9A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 40C/W when mounted on a 1 in2 pad of 2 oz copper b) 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V. (c)2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 2 www.fairchildsemi.com FDD3860 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 60 ID, DRAIN CURRENT (A) 3.0 VGS = 10V VGS = 8V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 40 30 20 10 0 0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 7V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 2.5 2.0 1.5 1.0 0.5 0 10 VGS = 6V VGS = 7V VGS = 8V VGS = 10V VGS = 6V 1 2 3 4 5 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 100 SOURCE ON-RESISTANCE (m) 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 ID = 5.9A VGS = 10V ID = 5.9A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 80 60 40 20 0 TJ = 25oC rDS(on), DRAIN TO TJ = 125oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 50 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V VDS = 10V 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC 40 30 TJ = 150oC TJ = 25oC TJ = -55oC 20 TJ = 25oC 10 TJ = -55oC 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 3 www.fairchildsemi.com FDD3860 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 5.9A VDD = 25V 3000 8 6 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 1000 VDD = 50V Ciss CAPACITANCE (pF) VDD = 75V Coss 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 35 ID, DRAIN CURRENT (A) 10 8 IAS, AVALANCHE CURRENT(A) 6 4 TJ = 125oC TJ = 25oC 28 VGS = 10V 21 14 RJC = 1.8 C/W o 2 7 0 25 1 0.01 0.1 1 10 100 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 5 VGS = 10V ID, DRAIN CURRENT (A) 10 4 10 100us SINGLE PULSE 10 3 RJC = 1.8 C/W o 1 THIS AREA IS LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED RJC = 1.8 C/W TC = 25oC o 1ms 10ms DC 10 2 0.1 0.1 1 10 100 300 10 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 4 www.fairchildsemi.com FDD3860 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 FOR TEMPERATURES ABOVE 25oC DERATE PEAK PDM CURRENT AS FOLLOWS: 150 - T C I = I -----------------------25 t1 125 t2 TC = 25oC NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 SINGLE PULSE RJC = 1.8 C/W o 0.001 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJA = 40 C/W (Note 1a) o PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 RJA = 96 C/W (Note 1b) o 0.0001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 15. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 5 www.fairchildsemi.com FDD3860 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 6 www.fairchildsemi.com |
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